Samsung is one of the significant players in the semiconductor market and TSMC’s main competitor in terms of architecture development. Recall that recently the Taiwanese presented their 3-nm technology and even talked about a 2-nm analogue . Well, Samsung has announced the start of production of its vision of 3nm architecture with the new Gate-All-Around (GAA) technology, which allows to bypass FinFET limitations from today’s top-end chips. This will provide a decent increase in performance (by increasing the allowable current) and energy efficiency (by reducing the voltage). According to Samsung, the first generation of the 3nm architecture will deliver +23% performance, +45% energy efficiency and 16% space savings compared to its 5nm counterpart. The second generation will bring these figures to 30, 50 and 35%, respectively.

The Koreans also reported on the first application of the technology of transistor nanosheets, which come to replace the nanowire. Its advantage is wider channels, which become a prerequisite for increased productivity, energy efficiency and optimization level. First, it was tried on high-performance computing systems with subsequent transfer to mobile chipsets. We will probably see the first real projects based on Samsung’s 3nm architecture at the end of this year by Qualcomm and/or Apple.

© Artur Luchkin. mobile phone

According to Samsung