Samsung announced the creation of a new type of GDDR6W graphics memory. The main areas of its application are high-performance graphic solutions and the use of virtual reality.
The new GDDR6W memory is based on Samsung GDDR6 (x32) solutions and is supplemented with Fan-Out Wafer-Level Packaging (FOWLP) technology, which significantly increases bandwidth and memory capacity while maintaining the previous packaging dimensions. Thanks to the unchanged footprint, the new memory chips can easily be used in the same manufacturing processes that customers used for GDDR6 memory.
FOWLP technology involves mounting the memory crystal directly on the silicon wafer, not on the board. At the same time, the RDL (Re-distribution layer) technology is used, which provides thinner dilution schemes. In addition, the absence of a printed circuit board reduces the thickness of the case and improves heat dissipation. As a result, Samsung was able to double the number of memory chips in a package, double the capacity of DRAM graphics memory from 16 Gb to 32 Gb, and double the bandwidth and number of I/O operations from 32 to 64. In other words, the area , required for memory, was reduced by 50% compared to previous models.
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It is emphasized that GDDR6W technology can support HBM-level bandwidth at the system level. Yes, the HBM2E provides a data transfer rate of 3.2 Gbps per contact and has a system-level bandwidth of 1.6 TB/s. For GDDR6W, these figures are 22 Gbps per pin and 1.4 TB/s at the system level based on 512 I/O pins.
Samsung completed the standardization of GDDR6W at the JEDEC organization in the second quarter of this year. The company intends to expand the application scope of GDDR6W to small form factor devices such as notebooks, as well as new high-performance accelerators used for AI and HPC applications.
Source: videocardz