Samsung announced the release of the industry’s first GDDR6 memory chips with a data transfer rate of 24 Gb / s per pin. Such chips will be used in the next generation of AMD and NVIDIA graphics cards, laptops, game consoles and AI accelerators in data centers.
The new memory chips will provide a 30% increase in data transfer speed compared to the previous version (18 Gb / s). Thus, a fully equipped graphics card will be able to provide memory bandwidth up to 1.1 Tbps. This is equivalent to transferring 275 1080p movies in one second.
Unlike GDDR6X memory developed by Micron in collaboration with NVIDIA, Samsung’s new GDDR6 memory is fully compliant with JEDEC specifications. The chips are also expected to be less power hungry due to the use of high-k metal gate technology. In addition, the new memory will run cooler than GDDR6X, provide better performance, and be cheaper to manufacture.
Samsung is building a whole line of new GDDR6 memory that is based on a 10nm (1z) process node. The company will also release 20Gbps and 16Gbps data rates for low power applications. To this end, Samsung uses dynamic voltage switching technology, which can adjust the voltage from 1.1 V to 1.35 V, which will improve energy efficiency by 20% if necessary.
Samsung has already begun manufacturing select samples of the new 16Gb memory chips. The company’s customers will be able to start their own verification tests of the chips later this month. The commercial availability of 24 Gb/s GDDR6 chips will be tied to the release of upcoming next generation graphics cards.
Source: techspot
